New silicon devices beyond CMOS

被引：1
|
作者：
Suzuki, E [1 ]
Ishii, K [1 ]
Sekigawa, T [1 ]
机构：
[1] AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
JOURNAL DE PHYSIQUE IV | 2002年 / 12卷 / PR3期
关键词：
D O I：
10.1051/jp420020031
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Silicon technologies have successively progressed in past half a century. To continue the development in the 21(st) century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel effect improving device performance is an important consideration in such an ultrasmall device. We review the development of the double-gate-type MOS device as an emerging device, and discuss the technology directions.
引用
收藏
页码：27 / 30
页数：4
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