New silicon devices beyond CMOS

被引：1

作者：

Suzuki, E ^{[1
]}

Ishii, K ^{[1
]}

Sekigawa, T ^{[1
]}

机构：

[1] AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL DE PHYSIQUE IV | 2002年 / 12卷 / PR3期

关键词：

D O I：

10.1051/jp420020031

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Silicon technologies have successively progressed in past half a century. To continue the development in the 21(st) century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel effect improving device performance is an important consideration in such an ultrasmall device. We review the development of the double-gate-type MOS device as an emerging device, and discuss the technology directions.

引用

页码：27 / 30

页数：4

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