Dielectric property and thermal stability of HfO2 on silicon

被引：235

作者：

Lin, YS ^{[1
]}

Puthenkovilakam, R ^{[1
]}

Chang, JP ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 11期

关键词：

D O I：

10.1063/1.1506207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A stoichiometric, uniform, and amorphous hafnium oxide thin film is deposited by an atomic layer deposition process. The as-deposited hafnium oxide films showed superior electrical properties compared to zirconium oxides, including a dielectric constant of 23, a flatband voltage shift of +0.3 V, a hysteresis of 25 mV, an interfacial trap density of 1.8x10(11) cm(-2) eV(-1), and a leakage current density several orders of magnitude lower than SiO2 at an equivalent oxide thickness of 9.3 Angstrom, suitable for metal-oxide-semiconductor device applications. The thermal stability of hafnium oxide on silicon was determined to be better than that of zirconium oxide. Post-deposition annealing in oxygen and ammonia further improved the thermal stability of HfO2 to 1000 and 1100 degreesC, respectively. (C) 2002 American Institute of Physics.

引用

页码：2041 / 2043

页数：3

共 30 条

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