Dielectric property and thermal stability of HfO2 on silicon

被引：236

作者：

Lin, YS ^{[1
]}

Puthenkovilakam, R ^{[1
]}

Chang, JP ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 11期

关键词：

D O I：

10.1063/1.1506207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A stoichiometric, uniform, and amorphous hafnium oxide thin film is deposited by an atomic layer deposition process. The as-deposited hafnium oxide films showed superior electrical properties compared to zirconium oxides, including a dielectric constant of 23, a flatband voltage shift of +0.3 V, a hysteresis of 25 mV, an interfacial trap density of 1.8x10(11) cm(-2) eV(-1), and a leakage current density several orders of magnitude lower than SiO2 at an equivalent oxide thickness of 9.3 Angstrom, suitable for metal-oxide-semiconductor device applications. The thermal stability of hafnium oxide on silicon was determined to be better than that of zirconium oxide. Post-deposition annealing in oxygen and ammonia further improved the thermal stability of HfO2 to 1000 and 1100 degreesC, respectively. (C) 2002 American Institute of Physics.

引用

页码：2041 / 2043

页数：3

共 30 条

[1]

BRIAN I, 1993, THERMOCHEMICAL PROPE

[2]

BRIAN I, 1997, THERMOCHEMICAL PROPE

[3] Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films [J].

Callegari, A ;

Cartier, E ;

Gribelyuk, M ;

Okorn-Schmidt, HF ;

Zabel, T .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6466-6475

[4] High mobility HfO2 n- and p-channel transistors [J].

Campbell, SA ;

Ma, TZ ;

Smith, R ;

Gladfelter, WL ;

Chen, F .

MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) :361-365

[5] Thermal stability of stacked high-k dielectrics on silicon [J].

Chang, JP ;

Lin, YS .

APPLIED PHYSICS LETTERS, 2001, 79 (23) :3824-3826

[6] IN-SITU PULSED LASER-INDUCED THERMAL-DESORPTION STUDIES OF THE SILICON CHLORIDE SURFACE-LAYER DURING SILICON ETCHING IN HIGH-DENSITY PLASMAS OF CL2 AND CL2/O2 MIXTURES [J].

CHENG, CC ;

GUINN, KV ;

DONNELLY, VM ;

HERMAN, IP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (05) :2630-2640

[7] Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties [J].

Cho, YJ ;

Nguyen, NV ;

Richter, CA ;

Ehrstein, JR ;

Lee, BH ;

Lee, JC .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1249-1251

[8] High-density ZrO2 and HfO2:: Crystalline structures and equations of state [J].

Desgreniers, S ;

Lagarec, K .

PHYSICAL REVIEW B, 1999, 59 (13) :8467-8472

[9] Composition control of Hf1-xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors [J].

Hendrix, BC ;

Borovik, AS ;

Xu, C ;

Roeder, JF ;

Baum, TH ;

Bevan, MJ ;

Visokay, MR ;

Chambers, JJ ;

Rotondaro, ALP ;

Bu, H ;

Colombo, L .

APPLIED PHYSICS LETTERS, 2002, 80 (13) :2362-2364

[10]

*INT SEM, 2001, INT TECHN ROADM SEM

← 1 2 3 →