High-performance TFTs fabricated on plastic substrates

被引：38

作者：

Lemmi, F ^{[1
]}

Chung, W ^{[1
]}

Lin, S ^{[1
]}

Smith, PM ^{[1
]}

Sasagawa, T ^{[1
]}

Drews, BC ^{[1
]}

Hua, A ^{[1
]}

Stern, JR ^{[1
]}

Chen, JY ^{[1
]}

机构：

[1] FlexICS Inc, Milpitas, CA 95035 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 07期

关键词：

excimer lasers; flat-panel displays; plastic films; thin-film transistors (TFTs);

D O I：

10.1109/LED.2004.831208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poly-Si thin-film transistors (TFTs) have recently been introduced to commercial glass flat-panel displays. This letter presents a manufacturable process for fabricating poly-Si TFTs directly on plastic substrates that exceed TFT parameter requirements for active-matrix displays. Plastic sheets are laminated onto carrier wafers, to allow use of automated tools for manufacturing. In order to maintain adhesion through the whole process, the wafer temperature is kept below 105 degreesC. Laser crystallization is used to grow poly-Si, and a quarter-wavelength stack layer is deposited to protect plastic from the laser processing. In order to achieve state-of-the-art poly-Si TFTs on plastic, the gate oxide is optimized. Using a higher temperature anneal after delamination minimizes leakage currents.

引用

页码：486 / 488

页数：3

共 12 条

[1]

ASANO A, 2003, SID S, V34, P988

[2] POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].

BROTHERTON, SD .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (06) :721-738

[3] Influence of melt depth in laser crystallized poly-Si thin film transistors [J].

Brotherton, SD ;

McCulloch, DJ ;

Gowers, JP ;

Ayres, JR ;

Trainor, MJ .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) :4086-4094

[4] High mobility thin film transistors fabricated on a plastic substrate at a processing temperature of 110°C [J].

Gosain, DP ;

Noguchi, T ;

Usui, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (3AB) :L179-L181

[5] Single-grain Si TFTs with ECR-PECVD gate SiO2 [J].

Ishihara, R ;

Hiroshima, Y ;

Abe, D ;

van Dijk, BD ;

van der Wilt, PC ;

Higashi, S ;

Inoue, S ;

Shimoda, T ;

Metselaar, JW ;

Beenakker, CIM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (03) :500-502

[6]

LU JP, 2002, P MRS S, V715

[7] Optical filter for fabricating self-aligned amorphous Si TFTs [J].

Mei, P ;

Lu, JP ;

Chua, C ;

Ho, J ;

Wang, Y ;

Boyce, JB .

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 :677-682

[8] HYDROGEN PASSIVATION OF GRAIN-BOUNDARY DEFECTS IN POLYCRYSTALLINE SILICON THIN-FILMS [J].

NICKEL, NH ;

JOHNSON, NM ;

JACKSON, WB .

APPLIED PHYSICS LETTERS, 1993, 62 (25) :3285-3287

[9]

Pierret R. F., 1996, SEMICONDUCTOR DEVICE, P749

[10]

Street R.A., 2000, Technology and Applications of Amorphous Silicon, P147

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