Solution-processed nickel tetrabenzoporphyrin thin-film transistors

被引:65
作者
Shea, Patrick B. [1 ]
Kanicki, Jerzy
Pattison, Lisa R.
Petroff, Pierre
Kawano, Manami
Yamada, Hiroko
Ono, Noboru
机构
[1] Univ Michigan, Dept Elect & Comp Engn, Organ & Mol Elect Lab, Ann Arbor, MI 48109 USA
[2] Univ Calif Santa Barbara, Dept Mat Sci & Engn, Santa Barbara, CA 93106 USA
[3] Ehime Univ, Fac Sci, Dept Chem, Matsuyama, Ehime 7908577, Japan
关键词
FIELD-EFFECT TRANSISTORS; PENTACENE PRECURSOR; COPPER PHTHALOCYANINE; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; HIGH-PERFORMANCE; SOLID-STATE; PORPHYRINS; SEMICONDUCTOR; MOBILITY;
D O I
10.1063/1.2220641
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe nickel tetrabenzoporphyrin (NiTBP) as a solution-processible organic semiconductor. Whereas porphyrins in an unmodified state are typically planar and insoluble, a precursor synthetic route (NiCP) was used to deposit thin films via solution. Amorphous, insulating thin films of NiCP were deposited, and thermally converted to polycrystalline, semiconducting NiTBP. Films were studied using optical absorption and microscopy, atomic force microscopy, and x-ray diffraction. Highly concentrated NiCP was shown to form large, needle-shaped crystals drop-cast from solution. NiTBP thin-film field-effect transistors fabricated from spun-cast films demonstrated charge-carrier field-effect mobilities on the order of 0.1 and 0.2 cm(2)/V s and accumulation threshold voltages of -19 and -13, in the linear and saturation regimes, respectively. (c) 2006 American Institute of Physics.
引用
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页数:7
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