X-ray irradiation of silicon detectors

被引：0
|
作者：
Chmill, V. [1 ]
机构：
[1] Royal Inst Technol, AlbaNova, Dept Phys, SE-10691 Stockholm, Sweden
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 566卷 / 02期
关键词：
X-ray; silicon; detector; radiation hardness; voltage training;
D O I：
10.1016/j.nima.2006.07.057
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Silicon pad detectors were irradiated with a 30 kVp X-ray energy spectrum and the change in capacity and dark current was measured as a function of radiation dose and restoring time. After irradiation of the detectors the parameters were monitored and the time to get back to the baseline before irradiation was measured. The relaxation process of the detector functionality (the recovery of the characteristics) was observed with bias voltage applied to the detectors. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：722 / 726
页数：5
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