Transverse energy spread of photoelectrons emitted from GaAs photocathodes with negative electron affinity

被引:20
作者
Pastuszka, S
Kratzmann, D
Schwalm, D
Wolf, A
Terekhov, AS
机构
[1] UNIV HEIDELBERG,INST PHYS,D-69029 HEIDELBERG,GERMANY
[2] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK 630090,RUSSIA
关键词
D O I
10.1063/1.120231
中图分类号
O59 [应用物理学];
学科分类号
摘要
The mean transverse energy (MTE) of electrons emitted from GaAs photocathodes was measured systematically using a new method based on adiabatic transverse expansion of an electron beam in a spatially decreasing magnetic field. Electrons with energies above the conduction band minimum are found to be thermalized with the lattice temperature of the cathode while electrons having suffered energy losses prior to their emission show enhanced transverse energies. For (Cs,O) and (Cs,F) activation layers on the same cathode the same MTE is found. By cooling the cathode with liquid nitrogen, the MTE of the high-energy electrons was reduced to approximate to 14 meV. (C) 1997 American Institute of Physics.
引用
收藏
页码:2967 / 2969
页数:3
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