Influence of oxygen partial pressure on SmBa2Cu3O7-δ film deposited by laser chemical vapor deposition

Laser chemical vapor deposition (LCVD) was applied to prepare SmBa2Cu3O7-delta (SmBCO) superconductive films on single-crystalline LaAlO3 (100) substrates. The effect of oxygen partial pressure (P-O2) on the crystal orientation, microstructure, and superconducting property of SmBCO film were investigated thoroughly. The results of X-ray diffraction (XRD) and Raman showed that the crystal orientation of SmBCO film was pure c-axis orientation at the P-O2 of 200 Pa, and the a-axis orientation grains gradually emerged in SmBCO film with the increase of P-O2. The deposition rate, critical temperature (T-c), critical current density (J(c)) firstly increased and then decreased with the increase of P-O2. At the P-O2 of 200 Pa, the SmBCO film had smooth and dense surface, the lowest FWHM of phi-scan (1.1 degrees), the highest T-c (89.2 K) and J(c) (2.04 MA/cm(2)), which indicated that SmBCO superconductive films possessed excellent crystal structure and superconducting performance.