AFM study of growth of Bi2Sr2-xLaxCuO6 thin films

被引：0

作者：

Yang, HT ^{[1
]}

Tao, HJ ^{[1
]}

Zhang, YZ ^{[1
]}

Yang, DG ^{[1
]}

Li, L ^{[1
]}

Zhao, ZX ^{[1
]}

机构：

[1] CHINESE ACAD SCI,CTR CONDENSED MATTER PHYS,BEIJING 100080,PEOPLES R CHINA

来源：

PHYSICA C | 1997年 / 282卷

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

C-axis-oriented Bi2Sr1.6L0.4CuO6 thin films deposited on (100)SrTiO3, (100)LaAlO3 and (100)MgO substrates by RF-magnetron sputtering were studied with AFM (Atomic Force Microscope). Film thickness ranged from 15 nm to 600 nm. Different from YBCO thin films, AFM images of Bi-2201 thin films showed a terraced island growth mode with half-unit-cell growth unit in c-axis.

引用

页码：561 / 562

页数：2

共 3 条

[1] AFM AND TEM STUDIES ON HIGH-QUALITY BI-2223 THIN-FILMS GROWN BY MOCVD
ENDO, K
SHIMIZU, T
MATSUHATA, H
TEHERANI, FH
YOSHIDA, S
TOKUMOTO, H
KAJIMURA, K
NAKAMURA, K
FUEKI, K
[J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1995, 5 (02) : 1675 - 1679
[2] SCREW DISLOCATIONS IN HIGH-TC FILMS
GERBER, C
ANSELMETTI, D
BEDNORZ, JG
MANNHART, J
SCHLOM, DG
[J]. NATURE, 1991, 350 (6316) : 279 - 280
[3] GROWTH-MECHANISM OF SPUTTERED FILMS OF YBA2CU3O7 STUDIED BY SCANNING TUNNELING MICROSCOPY
HAWLEY, M
RAISTRICK, ID
BEERY, JG
HOULTON, RJ
[J]. SCIENCE, 1991, 251 (5001) : 1587 - 1589

← 1 →