Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer

被引：75
作者：
Shen, C. -H. [1 ]
Chen, H. -Y.
Lin, H. -W.
Gwo, S.
Klochikhin, A. A.
Davydov, V. Yu.
机构：
[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 25期
关键词：
D O I：
10.1063/1.2216924
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate that vertically aligned InN nanorods can be grown on Si(111) by plasma-assisted molecular-beam epitaxy. Detailed structural characterization indicates that individual nanorods are wurtzite InN single crystals with the growth direction along the c axis. Near-infrared photoluminescence (PL) from InN nanorods can be clearly observed at room temperature. However, in comparison to the InN epitaxial films, the PL efficiency is significantly lower. Moreover, the variable-temperature PL measurements of InN nanorods exhibit anomalous temperature effects. We propose that these unusual PL properties are results of considerable structural disorder (especially for the low-temperature grown InN nanorods) and strong surface electron accumulation effects. (c) 2006 American Institute of Physics.
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