Design of Voltage Reference with Low Sensitivity to Process, Supply Voltage and Temperature Variations

被引：0

作者：

Gopal, Hande Vinayak ^{[1
]}

Baghini, Maryam Shojaei ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

来源：

2013 IEEE 56TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS process-insensitive voltage reference generator, which is based on the weighted sum of thermal voltage and difference of threshold voltages, is presented. The voltage reference circuit uses high VTH and regular VTH transistors and produces reference level of 422mV. The proposed technique is analyzed theoretically and its results are compared with other methods. The circuit is designed and simulated in standard 180nm mixed mode CMOS technology for low-cost low-power applications. The circuit operates at minimum supply voltage of 1 V with maximum drawn current of 577nA only. A temperature coefficient of 36ppm/degrees C is achieved with line sensitivity of 0.01%/V. The proposed reference generator exhibits PSRR of -60.34 dB and -37.09 dB at 100Hz and 1MHz, respectively.

引用

页码：89 / 92

页数：4

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