Suppress Dynamic Hot-Carrier Induced Degradation in Polycrystalline Si Thin-Film Transistors by Using a Substrate Terminal

被引：13

作者：

Wang, Huaisheng ^{[1
]}

Wang, Mingxiang ^{[1
]}

Zhang, Dongli ^{[1
]}

机构：

[1] Soochow Univ, Dept Microelect, Suzhou 215006, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Thin-film transistor (TFT); substrate contact; dynamic hot-carrier degradation; nonequilibrium p-n junction; TEMPERATURE; STRESS; TFTS;

D O I：

10.1109/LED.2014.2308987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dynamic hot-carrier induced degradation is a major reliability issue for polycrystalline Si thin-film transistors (TFTs) under various pulsed voltage operations. To suppress the degradation, four-terminal TFT with an additional substrate terminal connected to the floating channel is proposed. The role of the substrate terminal is to supply majority carriers during the fast voltage transition and eliminate the nonequilibrium state associated with the channel/source and channel/drain junctions. It is demonstrated that device lifetime can be extended by more than one order of magnitude using the proposed structure. It can be more effective for forward biased substrate terminal and for narrow width TFTs, providing a feasible solution to enhance the TFT reliability.

引用

页码：551 / 553

页数：3

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