Resistivity and thermal stability of nickel mono-silicide

被引：50

作者：

Poon, MC ^{[1
]}

Deng, F

Chan, M

Chan, WY

Lau, SS

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED SURFACE SCIENCE | 2000年 / 157卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

NiSi; poly-Si; thermal stability;

D O I：

10.1016/S0169-4332(99)00513-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nickel monosilicide (NiSi) has been well recognized as a promising silicide for future ULSI devices. It can have low resistivity of 15 mu Omega cm on deep submicron lines and after high temperature (> 600 degrees C) annealing. This work studies the resistivity and thermal stability of thin NiSi layer on B, As, P-doped and in situ boron doped deep submicron polycrystalline silicon (poly-Si) lines after 500-800 degrees C/1 h of annealing. The stability of NiSi on crystalline silicon (c-Si), poly-Si and amorphous silicon (a-Si) film will also be studied. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：29 / 34

页数：6

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