Polarization memory in an oxidized porous SiC layer

被引：2
作者：
Danishevskii, AM
Rogachev, AY
Shuman, VB
Guk, EG
机构：
[1] A. F. Ioffe Physicotechnical Inst., Russian Academy of Sciences
来源：
SEMICONDUCTORS | 1997年 / 31卷 / 11期
关键词：
D O I：
10.1134/1.1187323
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Polarization and polarization memory of pulsed photoluminescence are observed on porous layers prepared on microcrystalline, cubic SiC films deposited on silicon substrates. The porous layer is oxidized by electrochemical means. A qualitative model is proposed to account for the mechanism underlying the onset of polarization of photoluminescence for linearly polarized excitation. (C) 1997 American Institute of Physics. [S1063-7826(97)02611-2].
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页码：1196 / 1199
页数：4
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