Low Dissipation Nanoscale Transistor Physics and Operations

被引:1
作者
Chui, Chi On [1 ]
Shih, Kun-Huan [1 ]
Shoorideh, Kaveh [1 ]
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
关键词
D O I
10.1109/ICSICT.2008.4734468
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Power dissipation has recently overtaken performance as the most important challenge in scaling nanoscale transistors. In this paper, we have proposed and preliminarily analyzed novel device concepts to reduce both the off-state leakage dissipation as well as the dynamic power consumption. The off-state leakage can be selectively suppressed using a wide bandgap drain heterojunction architecture. On the other hand, the dynamic power can be reduced using an asymmetric gate biasing scheme. We have also discussed the enabling device physics and operating principles.
引用
收藏
页码:29 / 32
页数:4
相关论文
共 15 条
[1]  
[Anonymous], INT TECHNOLOGY ROADM
[2]  
[Anonymous], 2003, IEEE INT ELECT DEVIC
[3]   DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTOR WITH VOLUME INVERSION - A NEW DEVICE WITH GREATLY ENHANCED PERFORMANCE [J].
BALESTRA, F ;
CRISTOLOVEANU, S ;
BENACHIR, M ;
BRINI, J ;
ELEWA, T .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :410-412
[4]   Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec [J].
Choi, Woo Young ;
Park, Byung-Gook ;
Lee, Jong Duk ;
Liu, Tsu-Jae King .
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) :743-745
[5]  
Doyle B., 2002, INTEL TECH J, V6, P42
[6]   Impact ionization MOS (I-MOS) - Part II: Experimental results [J].
Gopalakrishnan, K ;
Woo, R ;
Jungemann, C ;
Griffin, PB ;
Plummer, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (01) :77-84
[7]   A NEW RECOMBINATION MODEL FOR DEVICE SIMULATION INCLUDING TUNNELING [J].
HURKX, GAM ;
KLAASSEN, DBM ;
KNUVERS, MPG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) :331-338
[8]  
Kim D., 2006, P SISPAD, P389
[9]   Analysis of quasi double gate method for performance prediction of deep submicron double gate SOI MOSFETs [J].
Kranti, A ;
Chung, TM ;
Flandre, D ;
Raskin, JP .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (05) :423-429
[10]   High-performance deep submicron ge pMOSFETs with halo implants [J].
Nicholas, Gareth ;
De Jaeger, Brice ;
Brunco, David P. ;
Zimmerman, Paul ;
Eneman, Geert ;
Martens, Koen ;
Meuris, Marc ;
Heyns, Marc M. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) :2503-2511