First-principles calculations of the structural and electronic properties of the ScN(001) surface

被引:58
作者
Takeuchi, N
Ulloa, SE
机构
[1] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Ensenada 22800, Baja California, Mexico
[2] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
[3] Ohio Univ, Condensed Matter & Surface Sci Program, Athens, OH 45701 USA
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 23期
关键词
D O I
10.1103/PhysRevB.65.235307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the structural and electronic properties of the (001) surface of ScN by first-principles total-energy calculations. Since experimental scanning tunneling microscope (STM) images indicate a (1x1) periodicity, we have restricted our calculations to models compatible with this periodicity. Several structures were considered in our study. It was found that for a N-rich surface, the most stable configuration corresponds to a relaxed bulk terminated surface. Electronic properties of this surface are similar to those of the bulk and the surface is semiconductor. In contrast, the most favorable configuration for a Sc-rich surface corresponds to a surface with N vacancies in the first layer. In this case the surface is metallic. Our calculations, and predicted bias dependence of STM images, are in good agreement with experiments.
引用
收藏
页码:2353071 / 2353075
页数:5
相关论文
共 21 条
  • [1] Molecular beam epitaxial growth of atomically smooth scandium nitride films
    Al-Brithen, H
    Smith, AR
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (16) : 2485 - 2487
  • [2] BLAHA P, 1999, COMPUTER CODE WIEN97
  • [3] Dismukes J. P., 1972, Journal of Crystal Growth, V13-14, P365, DOI 10.1016/0022-0248(72)90185-6
  • [4] Microstructure and electronic properties of the refractory semiconductor ScN grown on Mg0(001) by ultra-high-vacuum reactive magnetron sputter deposition
    Gall, D
    Petrov, I
    Madsen, LD
    Sundgren, JE
    Greene, JE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04): : 2411 - 2417
  • [5] Growth of poly- and single-crystal ScN on MgO (001):: Role of low-energy N+2 irradiation in determining texture, microstructure evolution, and mechanical properties
    Gall, D
    Petrov, I
    Hellgren, N
    Hultman, L
    Sundgren, JE
    Greene, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) : 6034 - 6041
  • [6] Electronic structure and optical spectra of the semimetal ScAs and of the indirect-band-gap semiconductors ScN and GdN
    Lambrecht, WRL
    [J]. PHYSICAL REVIEW B, 2000, 62 (20) : 13538 - 13545
  • [7] 1ST-PRINCIPLES TOTAL-ENERGY CALCULATION OF GALLIUM NITRIDE
    MIN, BJ
    CHAN, CT
    HO, KM
    [J]. PHYSICAL REVIEW B, 1992, 45 (03): : 1159 - 1162
  • [8] ELECTRON-HOLE LIQUID AS A TRUE GROUND-STATE
    MONNIER, R
    RHYNER, J
    RICE, TM
    KOELLING, DD
    [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5554 - 5556
  • [9] MOUSTAKAS TD, 1996, ELECTROCHEM SOC P, V9611, P197
  • [10] MUNOZ A, 1991, PHYS REV B, V44, P10372, DOI 10.1103/PhysRevB.44.10372