Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping

被引：1
作者：
Liu, Wei [1 ,2 ]
Lu, Tiecheng [1 ,2 ]
Chen, Qingyun
Hu, Youwen [1 ,2 ]
Dun, Shaobo [1 ,2 ]
Shlimak, Issai [3 ,4 ]
机构：
[1] Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China
[2] Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
[3] Bar Ilan Univ, Minerva Ctr, IL-52900 Ramat Gan, Israel
[4] Bar Ilan Univ, Jack & Pearl Resnick Inst Adv Technol, Dept Phys, IL-52900 Ramat Gan, Israel
来源：
PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL | 2014年 / 24卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Ge nanocrystals; Ion implantation; Neutron transmutation doping; Photoluminescence property; VISIBLE PHOTOLUMINESCENCE; QUANTUM DOTS; LUMINESCENCE; DEFECTS; IMPROVEMENT; SIO2-FILMS; MATRICES;
D O I：
10.1016/j.pnsc.2014.04.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanocrystalline Ge-74 embedded SiO2 films were prepared by employing ion implantation and neutron transmutation doping methods. Transmission electron microscopy, energy dispersive x-ray spectroscopy, and photoluminescence of the obtained samples were measured. The existence of As dopants transmuted from Ge-74 is significant to guarantee the uniformity and higher volume density of Ge nanocrystals by tuning the system's crystallinity and activating mass transfer process. It was observed that the photoluminescence intensity of Ge nanocrystals increased first then decreased with the increase of arsenic concentration. The optimized fluence of neutron transmutation doping was found to be 5.5 x 10(17) cm(-2) to achieve maximum photoluminescence emission in Ge embedded SiO2 film. This work opens a route in the three-dimensional nanofabrication of uniform Ge nanocrystals. (c) 2014 Chinese Materials Research Society. Production and hosting by Elsevier B.V. All rights reserved.
引用
收藏
页码：226 / 231
页数：6
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