Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

被引：12

作者：

Liu, Kang ^{[1
]}

Zhao, Jiwen ^{[2
]}

Sun, Huarui ^{[1
]}

Guo, Huaixin ^{[3
]}

Dai, Bing ^{[2
]}

Zhu, Jiaqi ^{[2
]}

机构：

[1] Harbin Inst Technol, Key Lab Micronano Optoelect Informat Syst, Minist Ind & Informat Technol, Shenzhen 518055, Peoples R China

[2] Harbin Inst Technol, Ctr Composite Mat & Struct, Harbin 150080, Heilongjiang, Peoples R China

[3] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China

来源：

CHINESE PHYSICS B | 2019年 / 28卷 / 06期

基金：

中国国家自然科学基金;

关键词：

GaN heteroepitaxy; thermal conductivity; transient thermoreflectance; ultraviolet laser; CONDUCTIVITY;

D O I：

10.1088/1674-1056/28/6/060701

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet (UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance (TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.

引用

页数：5

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