Ground-state lasing of stacked InAs/GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition

被引：25

作者：

Tatebayashi, J ^{[1
]}

Nuntawong, N ^{[1
]}

Xin, YC ^{[1
]}

Wong, PS ^{[1
]}

Huang, SH ^{[1
]}

Hains, CP ^{[1
]}

Lester, LF ^{[1
]}

Huffaker, DL ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 22期

关键词：

D O I：

10.1063/1.2208553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the device characteristics of stacked InAs/GaAs quantum dots (QDs) with GaP strain-compensation (SC) layers grown by metal organic chemical vapor deposition. By inserting GaP SC layers within the stacked structures, decrease in the density of QDs by stacking QDs can be suppressed due to reduction of overall compressive strain within the stacked QDs. We demonstrate ground-state lasing at 1.265 mu m of six layers of InAs/GaAs QDs with GaP SC layers. The threshold current density is as low as 108 A/cm(2). We also assess the internal loss and maximum modal gain of fabricated QD lasers by using a segmented contact method. The internal loss is as low as 5 cm(-1), and the maximum modal gain of the ground state of the stacked QDs is approximately 10 cm(-1). (c) 2006 American Institute of Physics.

引用

页数：3

共 17 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
ARAKAWA, Y
SAKAKI, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
[2] 1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine
Kaiander, IN
Sellin, RL
Kettler, T
Ledentsov, NN
Bimberg, D
Zakharov, ND
Werner, P
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (16) : 2992 - 2994
[3] High-frequency modulation characteristics of 1.3-μm InGaAs quantum dot lasers
Kim, SM
Wang, Y
Keever, M
Harris, JS
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (02) : 377 - 379
[4] Strain and electronic interactions in InAs/GaAs quantum dot multilayers for 1300 nm emission
Le Ru, EC
Bennett, AJ
Roberts, C
Murray, R
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) : 1365 - 1370
[5] InGaAs quantum dots grown with GaP strain compensation layers
Lever, P
Tan, HH
Jagadish, C
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) : 5710 - 5714
[6] Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
Liu, HY
Sellers, IR
Badcock, TJ
Mowbray, DJ
Skolnick, MS
Groom, KM
Gutiérrez, M
Hopkinson, M
Ng, JS
David, JPR
Beanland, R
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (05) : 704 - 706
[7] Defect dissolution in strain-compensated stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Nuntawong, N
Huang, S
Jiang, YB
Hains, CP
Huffaker, DL
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (11)
[8] Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition
Nuntawong, N
Xin, YC
Birudavolu, S
Wong, PS
Huang, S
Hains, CP
Huffaker, DL
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (19) : 1 - 3
[9] Effect of strain-compensation in stacked 1.3 μm InAs/GaAs quantum dot active regions grown by metalorganic chemical vapor deposition
Nuntawong, N
Birudavolu, S
Hains, CP
Huang, S
Xu, H
Huffaker, DL
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3050 - 3052
[10] Comparison of radiative and structural properties of 1.3 μm InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy:: Effect on the lasing properties
Passaseo, A
De Vittorio, M
Todaro, MT
Tarantini, I
De Giorgi, M
Cingolani, R
Taurino, A
Catalano, M
Fiore, A
Markus, A
Chen, JX
Paranthoen, C
Oesterle, U
Ilegems, M
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (21) : 3632 - 3634

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