A 2D sub-threshold current model for single halo triple material surrounding gate (SHTMSG) MOSFETs

被引：9
|
作者：
Dhanaselvam, P. Suveetha [1 ]
Balamurugan, N. B. [2 ]
机构：
[1] Velammal Coll Engn & Technol, Dept Elect & Commun Engn, Madurai, Tamil Nadu, India
[2] Thiagarajar Coll Engn, Dept Elect & Commun Engn, Madurai, Tamil Nadu, India
来源：
MICROELECTRONICS JOURNAL | 2014年 / 45卷 / 06期
关键词：
Threshold voltage; Subthreshold current; Short channel effects;
D O I：
10.1016/j.mejo.2014.03.017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the proposed work analytical modeling of single halo triple material surrounding gate (SH-TMSG) MOSFET is developed. The threshold voltage and subthreshold current has been derived using parabolic approximation method and the simulation results are analyzed. The threshold voltage roll off is reduced and it denotes the deterioration of short channel effects. The results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated. (c) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：574 / 577
页数：4
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