Stress development during annealing of self-assembled InAs/GaAs quantum dots measured in situ with a cantilever beam setup

被引：5
|
作者：
Hu, D. Z. [1 ]
Schaadt, D. M. [1 ]
Ploog, K. H. [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 293卷 / 02期
关键词：
mass transfer; nanostructures; ripening; molecular beam epitaxy; quantum dots;
D O I：
10.1016/j.jcrysgro.2006.06.009
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have investigated the coarsening of InAs quantum dots (QDs) in real time by measuring the stress evolution using an in situ cantilever beam setup. During deposition of InAs QDs, stress is accumulated, which then relaxes during subsequent annealing. Models based on different mechanisms for Ostwald ripening are fitted to the stress relaxation curves. A model describing ripening limited by diffusion along dot boundaries yields a good fit for annealing at 440 degrees C. For annealing at 470 degrees C, the relaxation curve can be fitted very well with a model in which ripening is controlled by attachment/detachment of atoms on the dot surface. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：546 / 549
页数：4
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