Magnetic properties of In2O3 containing Fe3O4 nanoparticles

被引：13

作者：

Alshammari, Marzook S. ^{[1
,2
]}

Alqahtani, Mohammed S. ^{[1
,3
]}

Albargi, Hasan B. ^{[1
]}

Alfihed, Salman A. ^{[2
]}

Alshetwi, Yaser A. ^{[2
]}

Alghihab, Abdulrahman A. ^{[2
]}

Alsamrah, Abdullah M. ^{[2
]}

Alshammari, Nawaf M. ^{[2
]}

Aldosari, Mohammed A. ^{[2
]}

Alyamani, Ahmed ^{[2
]}

Hakimi, Ali M. H. R. ^{[4
]}

Heald, Steve M. ^{[5
]}

Blythe, Harry J. ^{[1
]}

Blamire, Mark G. ^{[4
]}

Fox, A. Mark ^{[1
]}

Gehring, Gillian A. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] King Abdulaziz City Sci & Technol, Natl Ctr Nanotechnol, Riyadh 11442, Saudi Arabia

[3] King Saud Univ, Dept Phys & Astron, Riyadh 11451, Saudi Arabia

[4] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England

[5] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 14期

基金：

英国工程与自然科学研究理事会;

关键词：

INDIUM TIN OXIDE; HIGH-TEMPERATURE FERROMAGNETISM; THIN-FILMS; POLYETHYLENE NAPTHALATE; OPTICAL-PROPERTIES; FE; CU; (IN1-XFEX)(2)O3-SIGMA; SEMICONDUCTORS; ELECTRONICS;

D O I：

10.1103/PhysRevB.90.144433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Films of Fe-doped In2O3 that were deliberately fabricated so they contained Fe3O4 nanoparticles were deposited on sapphire substrates by pulsed laser deposition at low oxygen pressure. The concentration of Fe was varied between 1% and 5%, and the effect of including 5% of Sn and vacuum annealing were also investigated. Structural analysis indicated a high concentration of Fe3O4 nanoparticles that caused substantial values of the coercive field at room temperature. Transport measurements indicated that the films were metallic, and an anomalous Hall effect was observed for the sample with 5% of Fe. The concentration of nanoparticles was reduced dramatically by the inclusion of 5% of Sn. Magnetic circular dichroism spectra taken in field and at remanence were analyzed to show that the samples had a magnetically polarized defect band located below the conduction band as well as magnetic Fe3O4 nanoparticles. The signal from the defect states near the band edge was enhanced by increasing the number of carriers by either including Sn or by annealing in vacuum.

引用

页数：11

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