Nonlinear I-V characteristics of doped SnO2

被引：17
作者：
Dhage, SR
Choube, V
Ravi, V [1 ]
机构：
[1] Natl Chem Lab, Phys & Mat Chem Div, Pune 411008, Maharashtra, India
[2] Natl Chem Lab, Catalysis Div, Pune 411008, Maharashtra, India
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 110卷 / 02期
关键词：
ceramics; electron microscopy; diffraction; electrical measurements; Schottky barrier; doping effects;
D O I：
10.1016/j.mseb.2004.02.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
When tin oxide is doped with Sb2O3 and CoO, it shows highly nonlinear current (I)-voltage (V) characteristics. Addition of CoO leads to creation of oxygen vacancies and helps in sintering of SnO2. Antimony oxide acts as a. donor and increases the conductivity. The results are nearly same when antimony oxide is replaced by tantalum oxide. The grain size of these sintered ceramics varies from 5 to 7 mum and the grain boundary barrier height (Phi(B)) is in the range of 0.5 eV. The observed nonlinear coefficient (alpha) is 25 and 27 for antimony and tantalum oxide, respectively and the breakdown field is in the range of 1250 V cm(-1). (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：168 / 171
页数：4
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