Next Generation Gallium Nitride HEMTs Enabled by Diamond Substrates

被引：0

作者：

Tyhach, M. ^{[1
]}

Altman, D. ^{[1
]}

Bernstein, S. ^{[1
]}

Korenstein, R. ^{[1
]}

Francis, D. ^{[2
]}

Faili, F. ^{[2
]}

Ejeckam, F. ^{[2
]}

Cho, J. ^{[3
]}

Goodson, K. E. ^{[3
]}

Kim, S. ^{[4
]}

Graham, S. ^{[4
]}

机构：

[1] Raytheon Co, Tewksbury, MA 01876 USA

[2] Element 6, Santa Clara, CA 95054 USA

[3] Stanford Univ, Stanford, CA 94305 USA

[4] Georgia Inst Technol, Atlanta, GA 30332 USA

来源：

2014 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) | 2014年

关键词：

GaN; diamond; HEMT; thermal interface resistance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the thermal and electrical performance of GaN on Diamond devices, where the GaN on Diamond substrates are fabricated by taking epi from a host growth substrate and replacing it through direct growth of CVD diamond. We have found GaN on Diamond material improves thermal performance while maintaining electrical performance. This work demonstrates that GaN on Diamond technology can form the foundation of a next generation GaN device with 3X (or more) higher areal power density.

引用

页数：4