Surface textured MF-sputtered ZnO films for microcrystalline silicon-based thin-film solar cells

被引：114

作者：

Huepkes, J. ^{[1
]}

Rech, B.

Kluth, O.

Repmann, T.

Zwaygardt, B.

Mueller, J.

Drese, R.

Wuttig, M.

机构：

[1] Forschungszentrum Julich GmbH, Inst Photovolta, D-52425 Julich, Germany

[2] Rhein Westfal TH Aachen, Inst Phys New Mat, Dept Phys, D-52056 Aachen, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 18-19期

关键词：

reactive sputtering; zinc oxide; thin-film; silicon; solar cells;

D O I：

10.1016/j.solmat.2006.06.027

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Highly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) films were prepared by reactive mid-frequency (MF) magnetron sputtering at high growth rates. By varying the deposition pressure, pronounced differences with respect to film structure and wet chemical etching behavior were obtained. Optimized films develop good light-scattering properties upon etching leading to high efficiencies when applied to amorphous (a-Si:H) and microcrystalline (mu c-Si:H) silicon-based thin-film solar cells and modules. Initial efficiencies of 7.5% for a mu c-Si:H single junction and 9.7% for an a-Si:H/mu c-Si:H tandem module were achieved on an aperture area of 64 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：3054 / 3060

页数：7

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