Phase transition of gallium containing telluride thin films

被引：0
|
作者：
Petkov, P. [2 ]
Ilcheva, V. [1 ]
Wamwangi, D. [3 ]
Wuttig, M. [3 ]
Ilchev, P. [4 ]
Petkova, T. [1 ]
机构：
[1] BAS, Inst Electrochem & Energy Syst, Sofia, Bulgaria
[2] Univ Chem Technol & Met, Dept Phys, BU-1756 Sofia, Bulgaria
[3] Aachen Univ RWTH, Phys Dept 1A, Aachen, Germany
[4] BAS, Cent Lab Photoproc Acad J Malinowski, Sofia, Bulgaria
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 09期
关键词：
Chalcogenide glasses; Thin films; Sheet resistance; CRYSTALLIZATION KINETICS; X-RAY; ABSORPTION; GLASSES; SYSTEM; GATE;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The phase transition of thin (GeTe5)1-xGa(x) films has been investigated using the temperature dependent sheet resistance method The dependence of the resistance upon the gallium content and temperature has been discussed The films with the highest gallium content of 20 mol % exhibit two transitions in the sheet resistance at 90 degrees C and 250 degrees C, where the sheet resistance changes by 3 orders of magnitude
引用
收藏
页码：1261 / 1264
页数：4
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