Efficient and bright white light-emitting diodes based on single-layer heterophase halide perovskites

At present, electric lighting accounts for similar to 15% of global power consumption and thus the adoption of efficient, low-cost lighting technologies is important. Halide perovskites have been shown to be good emitters of pure red, green and blue light, but an efficient source of broadband white electroluminescence suitable for lighting applications is desirable. Here, we report a white light-emitting diode (LED) strategy based on solution-processed heterophase halide perovskites that, unlike GaN white LEDs, feature only one broadband emissive layer and no phosphor. Our LEDs operate with a peak luminance of 12,200 cd m(-2) at a bias of 6.6 V and a maximum external quantum efficiency of 6.5% at a current density of 8.3 mA cm(-2). Systematic in situ and ex situ characterizations reveal that the mechanism of efficient electroluminescence is charge injection into the alpha phase of CsPbI3, alpha to delta charge transfer and alpha-delta balanced radiative recombination. Future advances in fabrication technology and mechanistic understanding should lead to further improvements in device efficiency and luminance.