Photoluminescence enhancement by rapid thermal annealing for ZnO epitaxial films grown on Si (100) by pulsed laser deposition

被引：8
作者：
He, Q. [1 ]
Wang, X. N. [1 ]
Wang, H. B. [1 ]
Zhu, J. H. [1 ]
Wang, Hao [1 ]
Jiang, Y. [2 ]
机构：
[1] Hubei Univ, Fac Phys & Elect Technol, Wuhan 430062, Peoples R China
[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2009年 / 27卷 / 05期
关键词：
deep levels; II-VI semiconductors; interstitials; photoluminescence; pulsed laser deposition; rapid thermal annealing; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZINC-OXIDE FILMS; OPTICAL-PROPERTIES; THIN-FILMS; DEFECTS; GREEN; EMISSIONS; SAPPHIRE;
D O I：
10.1116/1.3207952
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
ZnO single-crystalline films were prepared by predepositing a homobuffer layer on Si (100) substrate in a pulsed laser deposition system. The effect of short-time rapid thermal annealing under N-2 and O-2 ambient on the optical property was systematically studied by photoluminescence measurements from 77 K to room temperature. Different from the adverse effect of the O-2-assisted rapid thermal annealing on the optical quality, N-2-assisted rapid thermal annealing can greatly enhance the ultraviolet emission while eliminate the deep-level emission band including separate green, yellow, and orange luminescence peaks. Such ambient-dependent photoluminescence enhancement was attributed to the elimination of oxygen interstitial in the ZnO film.
引用
收藏
页码：1231 / 1234
页数：4
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