Exceptionally Small Statistical Variations in the Transport Properties of Metal-Molecule-Metal Junctions Composed of 80 Oligophenylene Dithiol Molecules

被引:46
作者
Xie, Zuoti [1 ,2 ]
Baldea, Ioan [4 ,5 ]
Demissie, Abel T. [1 ,2 ]
Smith, Christopher E. [1 ,2 ]
Wu, Yanfei [1 ,2 ]
Haugstad, Greg [3 ]
Frisbie, C. Daniel [1 ,2 ]
机构
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA
[3] Univ Minnesota, Characterizat Facil, Minneapolis, MN 55455 USA
[4] Heidelberg Univ, Theoret Chem, INF 229, D-69120 Heidelberg, Germany
[5] NILPRP, Inst Space Sci, RO-077125 Bucharest, Romania
基金
美国国家科学基金会;
关键词
CONDUCTANCE; CONFORMATION; DEPENDENCE; ALIGNMENT; LENGTH; SAM;
D O I
10.1021/jacs.7b01918
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Strong stochastic fluctuations witnessed as very broad resistance (R) histograms with widths comparable to or even larger than the most probable values characterize many measurements in the field of molecular electronics, particularly those measurements based on single molecule junctions at room temperature. Here we show that molecular junctions containing 80 oligophenylene dithiol molecules (OPDn, 1 <= n <= 4) connected in parallel display small relative statistical deviations-delta R/R approximate to 25% after only similar to 200 independent measurements and we analyze the sources of these deviations quantitatively. The junctions are made by conducting probe atomic force microscopy (CP-AFM) in which an Au-coated tip contacts a self-assembled monolayer (SAM) of OPDs on Au. Using contact mechanics and direct measurements of the molecular surface coverage, the tip radius, tip-SAM adhesion force (F), and sample elastic modulus (E), we find that the tip SAM contact area is approximately 25 nm(2), corresponding to about 80 molecules in the junction. Supplementing this information with I-V data and an analytic transport model, we are able to quantitatively describe the sources of deviations delta R in R: namely, delta N (deviations in the number of molecules in the junction), delta epsilon (deviations in energetic position of the dominant molecular orbital), and delta Gamma (deviations in molecule-electrode coupling). Our main results are (1) direct determination of N; (2) demonstration that delta N/N for CP-AFM junctions is remarkably small (<= 2%) and that the largest contributions to delta R are delta epsilon and delta Gamma; (3) demonstration that delta R/R after only similar to 200 measurements is substantially smaller than most reports based on >1000 measurements for single molecule break junctions. Overall, these results highlight the excellent reproducibility of junctions composed of tens of parallel molecules, which may be important for continued efforts to build robust molecular devices.
引用
收藏
页码:5696 / 5699
页数:4
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