Rapid coating of through-porous substrates by atomic layer deposition

被引:27
作者
Ritala, Mikko
Kemell, Marianna
Lautala, Markus
Niskanen, Antti
Leskela, Markku
Lindfors, Sven
机构
[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, Helsinki, Finland
[2] Picosun Oy, FI-02150 Espoo, Finland
关键词
D O I
10.1002/cvde.200604228
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A method is proposed for rapid coating of through-porous substrates by using atomic layer deposition (ALD). The method also demonstrated a new design for ALD reactor for uniform coating macroscopic through-porous substrates. The coating of substrates of through-porous media can be used for applications including 3D integrated circuits, printed circuit boards, electrodes for electrochemical applications, 3D capacitors, and X-ray optics. It was observed during study that the ALD process can provide high aspect ratio structures and macroscopically porous substrates. The study also found that the self-limiting growth mechanism can provide excellent conformality, large are uniformity, and accurate control of film thickness. The study concluded that the new ALD reactor design can be used for faster coating.
引用
收藏
页码:655 / 658
页数:4
相关论文
共 11 条
[1]  
[Anonymous], 1988, Microbeam Analysis
[2]   In situ monitoring of atomic layer controlled pore reduction in alumina tubular membranes using sequential surface reactions [J].
Berland, BS ;
Gartland, IP ;
Ott, AW ;
George, SM .
CHEMISTRY OF MATERIALS, 1998, 10 (12) :3941-3950
[3]   Atomic layer deposition of SiO2 and TiO2 in alumina tubular membranes:: Pore reduction and effect of surface species on gas transport [J].
Cameron, MA ;
Gartland, IP ;
Smith, JA ;
Diaz, SF ;
George, SM .
LANGMUIR, 2000, 16 (19) :7435-7444
[4]   Conformal coating on ultrahigh-aspect-ratio nanopores of anodic alumina by atomic layer deposition [J].
Elam, JW ;
Routkevitch, D ;
Mardilovich, PP ;
George, SM .
CHEMISTRY OF MATERIALS, 2003, 15 (18) :3507-3517
[5]   A kinetic model for step coverage by atomic layer deposition in narrow holes or trenches [J].
Gordon, RG ;
Hausmann, D ;
Kim, E ;
Shepard, J .
CHEMICAL VAPOR DEPOSITION, 2003, 9 (02) :73-78
[6]  
Harris N.S., 1989, MODERN VACUUM PRACTI
[7]   Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing [J].
Kim, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06) :2231-2261
[8]   Atomic layer deposition chemistry:: Recent developments and future challenges [J].
Leskelä, M ;
Ritala, M .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (45) :5548-5554
[9]   Self-limited pore size reduction of mesoporous silica membranes via pyridine-catalyzed silicon dioxide ALD [J].
McCool, BA ;
DeSisto, WJ .
CHEMICAL VAPOR DEPOSITION, 2004, 10 (04) :190-+
[10]   CVD modification and vapor gas separation properties of nanoporous alumina membranes [J].
Pan, M ;
Cooper, C ;
Lin, YS ;
Meng, GY .
JOURNAL OF MEMBRANE SCIENCE, 1999, 158 (1-2) :235-241