Avalanche multiplication and noise in sub-micron Si p-i-n diodes

被引：5

作者：

Tan, CH ^{[1
]}

David, JPR ^{[1
]}

Clark, J ^{[1
]}

Rees, GJ ^{[1
]}

Plimmer, SA ^{[1
]}

Robbins, DJ ^{[1
]}

Herbert, DC ^{[1
]}

Carline, RT ^{[1
]}

Leong, WY ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

SILICON-BASED OPTOELECTRONICS II | 2000年 / 3953卷

关键词：

D O I：

10.1117/12.379602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured avalanche multiplication and noise in Si p-i-n diodes with avalanche widths, w, of 0.12 mu m, 0.18 mu m and 0.32 mu m, both for pure electron and mixed carrier injection. Multiplication and excess noise measurements were also performed with hole injection on a n(+)-i-p(divided by) diode with w = 0.84 mu m. Pure electron initiated avalanche noise results were found to be almost indistinguishable in all three layers. The excess noise factor increases dramatically with increasing w when the injection is mixed.

引用

页码：95 / 102

页数：8

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