Enhancement of magnetoresistance at room temperature in La0.8Ba0.2MnO3 epitaxial thin film

被引：35

作者：

Kanki, T ^{[1
]}

Tanaka, H ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 114卷 / 05期

关键词：

magnetic films and multilayers; epitaxy; electric transport; exchange and superexchange;

D O I：

10.1016/S0038-1098(00)00038-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Enhancement of magnetoresistance (MR) has been achieved at room temperature in the perovskite La0.8Ba0.2MnO3 epitaxial thin films. It was found that these particular epitaxial thin films exhibit higher MR ratio than that of bulk material (21% at 270 K), i.e. 33% at 320 K for 400 Angstrom thickness, 43% at 307 K for 650 Angstrom, 45% at 298 K for 1000 Angstrom and 48% at 267 K for 1300 Angstrom under the magnetic field of 8000 Oe. The metal-insulator transition temperature and magnetoresistance strongly depend on the film thickness. The MR ratio of the La0.8Ba0.2MnO3 film at room temperature is remarkably large in comparison with that of other magnetoresistive oxides. (C) 2000 Elsevier Science Ltd. All rights reserved.

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页码：267 / 270

页数：4

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