P-i-n structures based on high-ohmic gettered gallium arsenide for α particle detectors

被引：1

作者：

Gorelenok, A. T. ^{[1
]}

Tomasov, A. A.

Shmidt, N. M.

Il'ichev, E. A.

Lantratov, V. M.

Zadiranov, Yu. M.

Brunkov, P. N.

Titkova, O. V.

Kalyuzhnyi, N. A.

Mintarov, S. A.

Mdivani, V. N.

Katsoev, V. V.

Katsoev, L. V.

Shmelev, S. S.

机构：

[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 196140, Russia

[2] Lukin Sci Res Inst Phys Problems, Moscow, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2006年 / 32卷 / 11期

关键词：

D O I：

10.1134/S1063785006110241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that p-i-n detectors of alpha particles can be created using high-ohmic (n similar to 10(12) cm(-3)) gallium arsenide obtained through lanthanide gettering of a low-ohmic (n similar to 10(15) cm(-3)) initial material wafers.

引用

页码：987 / 989

页数：3

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