Organic field-effect transistors made of epitaxially grown crystals of a thiophene/phenylene co-oligomer

被引：1
作者：
Ichikawa, M
Yanagi, H
Shimizu, Y
Hotta, S
Suganuma, N
Koyama, T
Taniguchi, Y
机构：
[1] Kobe Univ, Fac Engn, Dept Sci & Chem Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
[2] Shinshu Univ, Fac Textile Sci & Technol, Dept Functional Polymer Sci, Ueda, Nagano 3568567, Japan
[3] Kashiwa Lab, Inst Res & Innovat, Kashiwa, Chiba 6578501, Japan
来源：
ADVANCED MATERIALS | 2002年 / 14卷 / 18期
关键词：
D O I：
10.1002/1521-4095(20020916)14:18<1272::AID-ADMA1272>3.0.CO;2-F
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Organic field-effect transistors (FETs) based on epitaxially grown crystals of a thiophene/phenylene co-oligomer (see Figure and cover) are described. The FETs exhibit good operation characteristics, and the epitaxial needle-like crystals display good charge transport properties along the needle axis. The maximum hole mobility of 0.66 cm(2) V-1 s(-1) is close to that of vapor phase grown oligothiophene single crystals.
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页码：1272 / +
页数：5
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