Instability of the Sb vacancy in GaSb

被引：18

作者：

Segercrantz, N. ^{[1
]}

Slotte, J. ^{[1
]}

Tuomisto, F. ^{[1
]}

Mizohata, K. ^{[2
]}

Raisanen, J. ^{[2
]}

机构：

[1] Aalto Univ, Dept Appl Phys, Sch Sci, POB 15100, FIN-00076 Aalto, Finland

[2] Univ Helsinki, Dept Phys, POB 43, FI-00014 Helsinki, Finland

来源：

PHYSICAL REVIEW B | 2017年 / 95卷 / 18期

关键词：

POSITRON LIFETIME SPECTROSCOPY; GAAS ISOTOPE HETEROSTRUCTURES; UNDOPED GALLIUM ANTIMONIDE; SELF-DIFFUSION; ELECTRON-IRRADIATION; SEMICONDUCTORS; DEFECTS; PHOTOLUMINESCENCE; ANNIHILATION; ACCEPTOR;

D O I：

10.1103/PhysRevB.95.184103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate that the instability of the Sb vacancy in GaSb leads to a further increase in the acceptor-type defect concentration in proton irradiated undoped, p-type GaSb. Using positron annihilation spectroscopy in situ with 10 MeV proton irradiation at 35 K, we find that the irradiation produces both native vacancy defects in GaSb. However, the Sb vacancy is unstable above temperatures of 150 K and undergoes a transition resulting in a Ga vacancy and a Ga antisite. The activation energy of this transition is determined to be 0.6 eV +/- 0.1 eV. Our results are in line with the established amphoteric defect model and prove that the instability of the Sb vacancy in GaSb has a profound role on the native defect concentration in GaSb.

引用

页数：5

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