Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation

被引：34

作者：

Kim, Dong-Gyu ^{[1
]}

Kim, Jong-Un ^{[1
]}

Lee, Jun-Sun ^{[1
]}

Park, Kwon-Shik ^{[2
]}

Chang, Youn-Gyoung ^{[2
]}

Kim, Myeong-Ho ^{[1
]}

Choi, Duck-Kyun ^{[1
]}

机构：

[1] Hanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul, South Korea

[2] LG Display Co Ltd, Ctr Res & Dev, 30,Magokjungang 10 Ro, Seoul, South Korea

来源：

RSC ADVANCES | 2019年 / 9卷 / 36期

关键词：

HYDROGEN; MAMMOGRAPHY; DIFFUSION; DETECTORS;

D O I：

10.1039/c9ra03053k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigated the effects of X-ray irradiation on the electrical characteristics of an amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT). The a-IGZO TFT showed a negative threshold voltage (V-TH) shift of -6.2 V after 100 Gy X-ray irradiation. Based on spectroscopic ellipsometry (SE) and X-ray photoelectron spectroscopy (XPS) analysis, we found that the Fermi energy (E-F) changes from 2.73 eV to 3.01 eV and that the sub-gap state of D1 and D2 changes near the conduction band minimum (CBM) of the a-IGZO film after X-ray irradiation. These results imply that the negative V-TH shift after X-ray irradiation is related to the increase in electron concentration of the a-IGZO TFT active layer. We confirmed that the sources for electron generation during X-ray irradiation are hydrogen incorporation from the adjacent layer or from ambient air to the active layer in the TFT, and the oxygen vacancy dependent persistent photocurrent (PPC) effect. Since both causes are reversible processes involving an activation energy, we demonstrate the V-TH shift recovery by thermal annealing.

引用

页码：20865 / 20870

页数：6

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