Silicon Solar Cell Voltage Increase Based on Limited Area Junction

被引：0

作者：

Teng, Peinan ^{[1
]}

An, Xinrui ^{[1
]}

To, Alexander ^{[1
]}

Mehrvarz, Hamid ^{[1
]}

Trupke, Thorsten ^{[1
,2
]}

Barnett, Allen ^{[1
]}

机构：

[1] Univ New S Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

[2] BT Imaging, Sydney, NSW 2017, Australia

来源：

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年

关键词：

limited area junction; voltage; photoluminescence characterisation; photovoltaic solar cell; silicon; EFFICIENCY;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A study of limited area p-n junction silicon solar cells using photoluminescence (PL) is used to demonstrate the pathways to an increase in open circuit voltage (V-OC). A high voltage baseline structure is used to ensure that the junction dominates the recombination. Both quasi-steady-state photoconductance (QSSPC) and PL measurements indicate higher implied voltage on the limited p-n junction area solar cells compared to full area junction cells. This work aims at achieving more than 740 mV V-OC on the limited area junction structure, through optimising the passivation layers and comprehensive analysis of voltage losses throughout the structure. Various choices of passivation layers and a new structure design for separating and analysing J(0) from each component on the limited area junction solar cell will be presented in this paper.

引用

页码：3021 / 3024

页数：4

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