Silicon Solar Cell Voltage Increase Based on Limited Area Junction

A study of limited area p-n junction silicon solar cells using photoluminescence (PL) is used to demonstrate the pathways to an increase in open circuit voltage (V-OC). A high voltage baseline structure is used to ensure that the junction dominates the recombination. Both quasi-steady-state photoconductance (QSSPC) and PL measurements indicate higher implied voltage on the limited p-n junction area solar cells compared to full area junction cells. This work aims at achieving more than 740 mV V-OC on the limited area junction structure, through optimising the passivation layers and comprehensive analysis of voltage losses throughout the structure. Various choices of passivation layers and a new structure design for separating and analysing J(0) from each component on the limited area junction solar cell will be presented in this paper.