Size effects and temperature dependence of stress-induced voiding

被引：5

作者：

Hommel, Martina ^{[1
]}

Penka, Sabine ^{[1
]}

机构：

[1] Infineon Technol AG, Otto Hahn Ring 6, D-81739 Munich, Germany

来源：

2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL | 2006年

关键词：

interconnect; stress-induced voiding; mechanical stress; size effect;

D O I：

10.1109/RELPHY.2006.251324

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this investigation the stress-induced voiding (SIV) behavior of via structures with different geometries was tested. A variation of via sizes, aspect ratios, and widths of connected metal lines was studied. The resistance drift and its temperature dependence behavior showed sensitivity to the structure size. This can be explained by the size-dependence of mechanical stress in the metallization.

引用

页码：685 / +

页数：2

共 6 条

[1] Stress migration and the mechanical properties of copper
Alers, GB
Sukamto, J
Woytowitz, P
Lu, X
Kailasam, S
Reid, J
[J]. 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 36 - 40
[2] Stress-induced voiding and its geometry dependency characterization
Doong, KYY
Wang, RCJ
Lin, SC
Hung, LJ
Lee, SY
Chiu, CC
Su, D
Wu, K
Young, KL
Peng, YK
[J]. 41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, : 156 - 160
[3] FISCHER AH, P IRPS 2001, P334
[4] A MODEL FOR STRESS-INDUCED METAL NOTCHING AND VOIDING IN VERY LARGE-SCALE-INTEGRATED AL-SI (1 PERCENT) METALLIZATION
MCPHERSON, JW
DUNN, CF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1321 - 1325
[5] Stress-induced voiding under vias connected to wide Cu metal leads
Ogawa, ET
McPherson, JW
Rosal, JA
Dickerson, KJ
Chiu, TC
Tsung, LY
Jain, MK
Bonifield, TD
Ondrusek, JC
McKee, WR
[J]. 40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, : 312 - 321
[6] VONGLASOW A, 2003, P ADV MET C 2002 AMC, P161

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