Fabrication technology of high-dielectric SrTiO3 thin film capacitors for microwave circuits

被引：4

作者：

Morito, K ^{[1
]}

Wakabayashi, H ^{[1
]}

Suzuki, T ^{[1
]}

Fujimoto, M ^{[1
]}

机构：

[1] Taiyo Yuden Co Ltd, Gunma 3703347, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2002年 / 110卷 / 05期

关键词：

microwave monolithic integrated circuits (MMIC); by-pass (RF-shunt) capacitor; SrTiO3; thin film; platinum; hillock; reactive ion etching (RIE);

D O I：

10.2109/jcersj.110.408

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Strontium titanate (SrTiO3) perovskite oxide thin films have been investigated for use as a dielectric material for by-pass (RF-shunt) capacitors in microwave monolithic integrated circuits (MMIC). This paper describes the structural and electrical features of SrTiO3 thin films and some issues related to the integration of SrTiO3 thin film on a silicon substrate, as a planar capacitor structure. The specific properties of the capacitors are found to be strongly dependent on the SrTiO3 deposition conditions, post thermal treatment and choice of the bottom electrode.

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收藏

页码：408 / 415

页数：8

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