Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

被引：6

作者：

Sugie, Ryuichi ^{[1
]}

Yoshikawa, Masanobu ^{[1
]}

Harada, Shin ^{[2
]}

Namikawa, Yasuo ^{[2
]}

机构：

[1] Toray Res Ctr Ltd, 3-3-7 Sonoyama, Shiga 5208567, Japan

[2] Sumitomo Elect Ind Ltd, Semicond Technol R&D Lab, Konohana Ku, Osaka 554, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

4H-SiC; diodes; stacking faults; recombination-enhanced dislocation motion; cathodoluminescence; EPILAYERS;

D O I：

10.4028/www.scientific.net/MSF.600-603.353

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of electron-beam irradiation on defects in 4H-SiC diode structures was investigated by cathodoluminescence (CL) microscopy and spectroscopy. In addition to threading edge and screw dislocations, two types of stacking faults (SFs) were characterized by their emission energy, geometric shape, and the sensitivity of electron-beam irradiation. The SFs at lambda = 425 nm (2.92 eV) expand from the surface of basal plane dislocation with line direction [11-20] and change their geometric shape by electron-beam irradiation. The SFs at lambda = 471 nm (2.63 eV) are only slightly influenced by electron-beam irradiation. The former corresponds to the Shockley-type SFs previously observed in the degraded p-i-n diodes, and the latter to in-grown SFs with 8H structure. The panchromatic CL images constructed by the sum of monochromatic CL images suggest that there are nonradiative recombination centers in the vicinity of Shockley-type SFs. The nucleation sites and the driving force for SF expansion are discussed.

引用

页码：353 / +

页数：2

共 8 条

[1] Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes [J].

Fujiwara, H ;

Kimoto, T ;

Tojo, T ;

Matsunami, H .

APPLIED PHYSICS LETTERS, 2005, 87 (05)

[2]

HARADA S, UNPUB

[3] The influence of in-grown stacking faults on the reverse current-voltage characteristics of 4H-SIC Schottky barrier diodes [J].

Harada, Shin ;

Namikawa, Yasuo .

Silicon Carbide and Related Materials 2006, 2007, 556-557 :885-888

[4] Structural analysis and reduction of in-grown stacking faults in 4H-SiC epilayers [J].

Izumi, S ;

Tsuchida, H ;

Kamata, I ;

Tawara, T .

APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3

[5] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J].

KANAYA, K ;

OKAYAMA, S .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) :43-&

[6] Degradation of hexagonal silicon-carbide-based bipolar devices [J].

Skowronski, M ;

Ha, S .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)

[7] Luminescence from stacking faults in 4H SiC [J].

Sridhara, SG ;

Carlsson, FHC ;

Bergman, JP ;

Janzén, E .

APPLIED PHYSICS LETTERS, 2001, 79 (24) :3944-3946

[8] Techniques for minimizing the basal plane dislocation density in SiC epilayers to reduce Vf drift in SiC bipolar power devices [J].

Sumakeris, J. J. ;

Bergman, J. P. ;

Das, M. K. ;

Hallin, C. ;

Hull, B. A. ;

Janzen, E. ;

Lendenmann, H. ;

O'Loughlin, M. J. ;

Paisley, M. J. ;

Ha, S. ;

Skowronski, M. ;

Palmour, J. W. ;

Carter, C. H. .

Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 :141-146

← 1 →