Enhanced thermoelectric performance of Bi0.5Sb1.5Te3 composites through potential barrier scattering at heterogeneous interfaces

被引：15

作者：

Dharmaiah, Peyala ^{[1
,2
]}

Lee, Kap-Ho ^{[3
]}

Song, Sung Ho ^{[1
,2
]}

Kim, Hyoung Seop ^{[4
]}

Hong, Soon-Jik ^{[1
,2
]}

机构：

[1] Kongju Natl Univ, Div Adv Mat Engn, 275 Budae Dong, Cheonan 330717, Chungcheongnam, South Korea

[2] Kongju Natl Univ, Inst Rare Met, 275 Budae Dong, Cheonan 330717, Chungcheongnam, South Korea

[3] Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 305764, South Korea

[4] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea

来源：

MATERIALS RESEARCH BULLETIN | 2021年 / 133卷

基金：

新加坡国家研究基金会;

关键词：

Bismuth antimony telluride; Gas-atomization; Composites; Interface potentials; Phonon scattering; BISBTE-BASED COMPOSITES; CARRIER SCATTERING; BI2TE3; NANOPARTICLES; TRANSPORT; PROPERTY; ZN4SB3; FIGURE; MERIT; ZINC;

D O I：

10.1016/j.materresbull.2020.111023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The inclusion of secondary phase in a matrix has been proven effective in diverse regimes of thermoelectric (TE) material research intended to attain high thermoelectric performance. Herein, we show that the introduction of semiconducting Zn4Sb3 alloys into a Bi0.5Sb1.5Te3 matrix to form ZnTe nanophase in situ causes enhanced electrical conductivity and reduced thermal conductivity. This is due to increase in the carrier concentration and intensified phonon scattering at interface potentials. These simultaneously increased the power factor by 17 % and achieved a remarkable reduction (25 %) of lattice thermal conductivity at 350 K for BST/2 wt% Zn(4)Sb(3 )composites. As a result, the largest value of ZT (1.35) was obtained at 350 K, which is 26 % higher than that of the Bi0.5Sb1.5Te3 matrix at the same temperature. Moreover, the maximum conversion efficiency was about 8.74 % at Delta T = 200 K for BST/2 wt% Zn4Sb3 composites, which is 25 % higher than that of a bare BST sample.

引用

页数：12

共 45 条

[1] Preparation and thermoelectric properties of semiconducting Zn4Sb3 [J].