Double Mesa Sidewall Silicon Carbide Avalanche Photodiode

被引：19

作者：

Liu, Han-Din ^{[1
]}

Zheng, Xiaoguang ^{[1
]}

Zhou, Qiugui ^{[1
]}

Bai, Xiaogang ^{[1
]}

Mcintosh, Dion C. ^{[1
]}

Campbell, Joe C. ^{[1
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2009年 / 45卷 / 12期

关键词：

Avalanche photodiodes; photodetector; silicon carbide; ultraviolet detector; MULTIPLICATION; GAIN;

D O I：

10.1109/JQE.2009.2022046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a double mesa 4H-SiC avalanche photodiode (APD) that suppresses premature edge break-down. The motivation for the double mesa structure is to eliminate the optically dead region that extends radially up to 30 mu m beyond the active region of conventional beveled mesa SiC APDs, which can significantly restrict the fill-factor of arrays.

引用

页码：1524 / 1528

页数：5

共 14 条

[1] DOUBLE-MESA REACH-THROUGH AVALANCHE PHOTO-DIODES WITH A LARGE GAIN-BANDWIDTH PRODUCT MADE FROM THIN SILICON FILMS [J].

ATAMAN, A ;

MULLER, J .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5324-5331

[2]

BAI X, 2008, P SOC PHOTO-OPT INS, V7055, P70550

[3] Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection [J].

Cha, Ho-Young ;

Soloviev, Stanislav ;

Zelakiewicz, Scott ;

Waldralb, Peter ;

Sandvik, Peter M. .

IEEE SENSORS JOURNAL, 2008, 8 (3-4) :233-237

[4] Study of reverse dark current in 4H-SiC avalanche photodiodes [J].

Guo, XY ;

Beck, AL ;

Li, XW ;

Campbell, JC ;

Emerson, D ;

Sumakeris, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (04) :562-567

[5] Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain [J].

Guo, XY ;

Beck, AL ;

Campbell, JC ;

Emerson, D ;

Sumakeris, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (10) :1213-1216

[6] Ionization rates and critical fields in 4H silicon carbide [J].

Konstantinov, AO ;

Wahab, Q ;

Nordell, N ;

Lindefelt, U .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :90-92

[7] Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode [J].

Li, T ;

Beck, AL ;

Collins, C ;

Dupuis, RD ;

Campbell, JC ;

Carrano, JC ;

Schurman, MJ ;

Ferguson, IA .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2421-2423

[8]

LIU H, 2008, IEEE PHOTONIC TECH L, V20, P57

[9] Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes [J].

Ng, BK ;

Yan, F ;

David, JPR ;

Tozer, RC ;

Rees, GJ ;

Qin, C ;

Zhao, JH .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (09) :1342-1344

[10]

Sze S.M., 2007, Physics of Semiconductor Devices, P82

← 1 2 →