Optical and electrochemical studies of thiacalix[4]arene film supported on Si/SiO2 for ion-sensitive sensor

被引：13
作者：
Ali, MB [1 ]
Abdelghani, A
Ouada, HB
Jaffrezic-Renault, N
Lamartine, R
机构：
[1] Inst Super Sci Appl & Technol, Sousse 4003, Tunisia
[2] IPEST, Unite Rech Phys Semicond, Tunis 2070, Tunisia
[3] Ecole Cent Lyon, CNRS, UMR 5621, F-69131 Ecully, France
[4] Univ Lyon 1, CNRS, UPRESA 5078, Lab Chim Ind, F-69622 Villeurbanne, France
来源：
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2002年 / 21卷 / 1-2期
关键词：
thiacalix[4]arene; impedance spectroscopy; ellipsometry; XPS; sensor;
D O I：
10.1016/S0928-4931(02)00063-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The present work is motivated by the development of ion-sensitive sensors (suited for aqueous medium) based on functional supported thin film as sensitive membrane. Thin thiacalix[4]arene films was deposited using the technique of thermal evaporation under vacuum to fabricate chemical ion-sensitive field effect transistor (ISFET) microsensors. The aim is to characterize thiacalix[4]arene thin film (morphology, chemical composition) and its optical and electrical properties before and after detection of copper(II) ions. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：29 / 34
页数：6
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