(Ba,Sr)RuO3 bottom electrode deposited by liqud delivery metalorganic chemical vapor deposition for (Ba,Sr)TiO3 high dielectric

被引：0

作者：

Choi, ES ^{[1
]}

Shin, WC ^{[1
]}

Yoon, SG ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea

来源：

FERROELECTRICS | 2002年 / 271卷

关键词：

LDMOCVD; deposition temperature; oxygen flow rate; resistivity; roughness;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conducting perovskite oxide, (Ba,Sr)RuO3 (BSR), which has many advantages for (Ba,Sr)TiO3 (BST) due to their similarity in crystal structure, lattice constant and chemical composition, was prepared on n-type Si (100) by liquid delivery metalorganic chemical vapor deposition (LDMOCVD). The deposition characteristics of BSR were controlled by gas-phase mass-transfer in these experiments. The BSR films deposited at 500degreesC and oxygen flow rate of 100 sccm (standard cc/min) showed a average roughness of 22Angstrom and resistivity of 810 muOmega-cm. The resistivity of BSR films for variation of oxygen flow rate showed a close relationship with the roughness of films.

引用

页码：1701 / 1706

页数：6