Low- and high-field electron-transport parameters for unstrained and strained Si1-xGex

Ohmic minority and majority drift mobilities as well as saturation velocities are reported for unstrained and strained Si1-xGex alloys up to x = 0.3. The electron-transport model is verified by measurements of the in-plane majority drift mobility in strained Si1-xGex samples for various dopant and Ge concentrations. Saturation velocities are determined by full-band Monte Carlo simulations, There is no substantial decrease in the mobility perpendicular to the Si/SiGe interface for doping concentrations above 10(19) cm(-3) and growing x. In contrast, the saturation-drift velocity is strongly reduced with x.