Transient current electric field profiling of single crystal CVD diamond

被引：22

作者：

Isberg, J.

Gabrysch, M.

Tajani, A.

Twitchen, D. J.

机构：

[1] Uppsala Univ, Div Elect Res, SE-75121 Uppsala, Sweden

[2] Element Six Ltd, Ascot SL5 8BP, Berks, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 08期

关键词：

D O I：

10.1088/0268-1242/21/8/035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transient current technique ( TCT) has been adapted for profiling of the electric field distribution in intrinsic single crystal CVD diamond. It was found that successive hole transits do not appreciably affect the electric field distribution within the sample. Transits of holes can therefore be used to probe the electric field distribution and also the distribution of trapped charge. Electron transits, on the other hand, cause an accumulation of negative charge in the sample. Illumination with blue or green light was shown to lead to accumulation of positive charge. Low concentrations of trapped charge can be detected in diamond using TCT, corresponding to an ionized impurity concentration below N = 10(10) cm(-3).

引用

收藏

页码：1193 / 1195

页数：3

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