Design of New Multi-Column 5,5:4 Compressor Circuit Based on Double-Gate UTBSOI Transistors

被引:2
作者
Ahmed, Rekib Uddin [1 ]
Thabah, Sheba Diamond [1 ]
Saha, Prabir [1 ]
机构
[1] Natl Inst Technol Meghalaya, Shillong 793003, Meghalaya, India
来源
2ND INTERNATIONAL CONFERENCE ON RECENT TRENDS IN ADVANCED COMPUTING ICRTAC -DISRUP - TIV INNOVATION , 2019 | 2019年 / 165卷
关键词
BSIM-IMG; compressor; multi-column; transmission-gate; UTBSOI; HIGH-SPEED; BSIM;
D O I
10.1016/j.procs.2020.01.027
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
In the modern electronic devices, compressor circuits are used to speed up the partial product addition (PPA) stage in the multipliers. This paper presents an architecture of multi-column 5,5:4 compressor whose new transistor level implementation has been carried out through the ultra-thin-body silicon-on-insulator (UTBSOI) transistors. Such compressor has been simulated in Cadence-spectre, and the performance parameters like power consumption and delay has been calculated at the rising and falling edge transition of input pulses. Advantage of the UTBSOI-compressor is further clarified from its comparison with the CMOS based design (CMOS-compressor). Simulation results reveal that the PDP exhibited by the UTBSOI-compressor is reduced by 79.89% than that of CMOS counterparts. Furthermore, to showcase the advantage of such compressor, it has been applied in the multiplier for PPA which offers approximate to 11.5% improvement in terms of power-delay-product (PDP) in the Virtex 6 platform. (C) 2019 The Authors. Published by Elsevier B.V.
引用
收藏
页码:532 / 540
页数:9
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