Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memory

被引：6

作者：

Lai Yun-Feng ^{[1
]}

Feng Jie

Qiao Bao-Wei

Ling Yun

Lin Yin-Yin

Tang Ting-Ao

Cai Bing-Chu

Chen Bang-Min

机构：

[1] Shanghai Jiao Tong Univ, Minist Educ, Key Lab Thin Film & Microfabricat, State Key Lab Micro Nano Fabricat Technol, Shanghai 200030, Peoples R China

[2] Fudan Univ, State Key Lab Applicat Specif Integrated Circuit, Shanghai 200433, Peoples R China

[3] Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA

来源：

ACTA PHYSICA SINICA | 2006年 / 55卷 / 08期

关键词：

phase change memory; multiple-state storage; nitrogen doping; Ge2Sb2Te5;

D O I：

10.7498/aps.55.4347

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nitrogen-doped Ge2Sb2Te5 (N-GST) film for phase change memory was prepared by reactive sputtering. Testing results show that doped nitrogen combines with Ge to form GeN, which not only restrains crystal grain growth but also increases the crystallization temperature and phase transformation temperature of Ge2Sb2Te5 (GST). Phase change memory (PCM) with N-GST can realize three-state storage in one PCM cell by using the resistivity difference between the amorphous state, the face centered cubic phase and the hexagonal phase of GST.

引用

页码：4347 / 4352

页数：6

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