Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films

被引：41

作者：

Morfouli, P ^{[1
]}

Ghibaudo, G ^{[1
]}

Ouisse, T ^{[1
]}

Vogel, E ^{[1
]}

Hill, W ^{[1
]}

Misra, V ^{[1
]}

McLarty, P ^{[1
]}

Wortman, JJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 08期

关键词：

D O I：

10.1109/55.511586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOSFET's with ultrathin (5 to 8.5 nm) Silicon oxynitride gate film prepared by low-pressure rapid thermal chemical vapor deposition (RTCVD) using SiH4, N2O and NH3 gases, are studied by low-frequency noise measurements (1 Hz up to 5 kHz), The analysis takes into account the correlated mobility fluctuations induced by those of the interfacial oxide charge, The nitrogen concentration, determined from SIMS analysis, varies from 0 to 11% atomic percentage. A comparison of the electrical properties between thermal and silicon oxynitride films is presented. The increasing LF noise signal with nitrogen atomic percentage indicates the presence of a higher density of slow interface traps with increasing nitrogen incorporation. Besides, a higher Coulomb scattering rate due to the nitridation induced interface charge explains reasonably well the degradation of the low field mobility after nitridation.

引用

页码：395 / 397

页数：3

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